APT80GA60LD40 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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APT80GA60LD40
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حجم فایل
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259.77
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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Manufacturer:
Microchip Technology
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Series:
POWER MOS 8™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
PT
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
143A
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Current - Collector Pulsed (Icm):
240A
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Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 47A
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Power - Max:
625W
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Switching Energy:
840µJ (on), 751µJ (off)
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Input Type:
Standard
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Gate Charge:
230nC
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Td (on/off) @ 25°C:
23ns/158ns
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Test Condition:
400V, 47A, 4.7Ohm, 15V
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Reverse Recovery Time (trr):
22ns
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-264-3, TO-264AA
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Supplier Device Package:
TO-264
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detail:
IGBT PT 600V 143A 625W Through Hole TO-264